Role in the project
UK will focus considerable effort on the development of very small, extremely sensitive microfabricated integral piezoresistive cantilever deflection sensors and their application to SPP systems in general and to scanning probe microscopy (SPM) in particular. All the sensors will be developed and fabricated using advanced silicon micromachining and standard CMOS processing. UK will use piezoresistive-effect sensor System for measurement of cantilever deflection, replacing the cumbersome alternatives such as laser deflection employing high sensitivity sensitive ultra thin MOS-transistor-channel as a piezoresistor in a Wheatstone bridge measurement configuration. This approach uses the piezoresistive effect in p-type bulk silicon, modified for quantum confinement in a Metal Oxide Field Effect Transistor (MOSFET) structure, providing micron scale structures, ideal for extension into the domain of Very Large Scale of Integration (VLSI) cantilever systems as required for modular cantilever chips.

Publication list related to the project:
Part1, Part2, Part3, Part4

www.ina.uni-kassel.de/etp.html